Norstel and ETRI/AIST Enter Strategic Collaboration for Silicon Carbide Materials
10 July 2007
Norstel AB (Norrköping, Sweden) and the Energy Technology Research Institute (ETRI) of the National Institute of Advanced Industrial Science and Technology (AIST) (Tsukuba, Japan) have entered into a strategic collaboration for development of Silicon Carbide (SiC) single crystal material for semiconductor applications.
Silicon carbide semiconductors enable new designs in power electronics for improving energy efficiency and performance in a wide range of applications such as hybrid cars, mobile phone base stations and radar systems.
The primary purpose of the collaboration will be to study next-generation SiC crystal growth techniques based on Norstel’s High Temperature Chemical Vapor Deposition (HTCVD) method to optimize crystal growth quality and manufacturability.
The Parties will jointly develop next generation crystal growth processes for large-diameter high-quality and cost-effective high volume SiC manufacturing.
he HTCVD method utilizing controlled purity gases in the growth process has, under the supervision of Dr. Alexandre Ellison, yielded very high purity wafers for advanced semiconductor processing. AIST has developed growth techniques based on the sublimation method under the supervision of Dr. Shin-ichi Nishizawa during the past 7 years, with impressive results on materials quality of up to 4” diameter. In April 2007, Dr. Nishizawa joined ETRI of AIST.
This agreement brings together a breadth of SiC expertise without parallel in the industry. We at Norstel are excited about the new possibilities this offers us and we are thrilled to have someone of Dr. Nishizawa’s experience co-operating with Norstel as we look to next generation SiC manufacturing technology.—Iain Jackson, Norstel CEO
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