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Transphorm releases industry’s first JEDEC-qualified 600V GaN HEMT
13 September 2012
Transphorm Inc. announced the JEDEC qualification of the company’s TPH2006PS Gallium Nitride(GaN) High Electron Mobility Transistor (HEMT) on SiC substrate, making it the industry’s first qualified 600V HEMT device. (Earlier post.)
The TPH2006PS, based on Transphorm’s patented, high-performance EZ-GaN technology, combines low switching and conduction losses resulting in reduced energy loss of up to 50% compared to conventional silicon-based power conversion designs. The TO-220-packaged device features RDS(on) of 150 mΩ, Qrr of 42 nC and high frequency switching capability that enables compact, lower cost systems.
Our team has accomplished the first qualification of a 600 Volt GaN Transistor product, allowing our customer-partners to now introduce energy saving products, Powered-by-Transphorm. This development also lays to rest any doubts that high voltage GaN transistors can indeed be successfully qualified.—Primit Parikh, President of Transphorm
Transphorm’s solutions simplify the design and manufacturing of a wide variety of electrical systems and devices, including motor drives, power supplies and inverters for solar panels and electric vehicles.
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