Dow Corning to Produce 100mm Silicon Carbide Epitaxy for Power Electronics
19 October 2010
Dow Corning will begin production of 100 mm silicon carbide (SiC) epitaxy, providing a single source for SiC substrates used in power electronics device manufacturing.
Dow Corning supplies SiC and silicon materials that can be used in high power applications such as high-tech communications, solar and wind energy systems, large scale electrical distribution grids, vehicles, and academic research.
The new product expands Dow Corning’s product line beyond its existing offerings of 76 mm SiC wafers and epitaxy and 100 mm SiC wafers.
I'm looking forward to the migration of SiC into more electronics, like inverters. Reduced cooling requirements mean smaller packages and cheaper overall costs.
Posted by: Engineer-Poet | 20 October 2010 at 05:39 AM