At the Power Control and Intelligent Motion (PCIM) event in Europe, Transphorm Inc. introduced the first 600V gallium nitride on silicon Transistors, Diodes and Modules. In February, the company announced the qualification of its first 600V GaN diodes. (Earlier post.)
In 2011, the company announced its first GaN on Silicon products: power transistors, diodes and modules, based on its patented, high-performance EZ GaN technology.
The following Transphorm products are now available for sale as evaluation samples through the Transphorm website to approved customers:
TPS30xxPK series – 600 V, 2-4-6 A, GaN diode in the industry standard TO-220 package
TPH3006PS- 600V, 180 mohm GaN transistor in the industry standard TO-220 package
TPT3044M - 600V, 3-ph GaN Module and related inverter application board TDMD2000E0I
The opportunity for widespread energy efficiency gains is staggering and our GaN solutions offer unprecedented energy gains. In the motor segment alone, Transphorm’s innovations create the potential to save 2.5 percent of US electricity generation through enhanced electro-mechanical efficiency of the full drive and motor system—equivalent to the energy saving potential of replacing incandescent lighting with white LEDs.—Umesh Mishra, CEO of Transphorm
Transphorm’s solutions cut energy waste by 50% today and simplify the design and manufacturing of a wide variety of electrical systems and devices, including motor drives, power supplies and inverters for solar panels and electric vehicles. To demonstrate the performance advantage of its patented GaN based technology, Transphorm is showcasing at the PCIM exhibition its EZ GaN based, dc-to-dc Boost Converter running at more than 99% efficiency and its Tru-Sine motor drive delivering 2-8% higher efficiency at 100 KHz vs. state of the art IGBT based motor drives at 15 kHz.
Electric power waste that occurs during power conversion is equivalent to the daily output of 318 coal plants, and it costs the US economy $40 billion per year.