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Cypress introduces nonvolatile memory family for critical data logging in automotive event data recorder and Industry 4.0 applications

Cypress Semiconductor Corp. announced a new serial nonvolatile memory family that offers superior performance and reliability for mission-critical data capture. The Excelon Ferroelectric Random Access Memory (F-RAM™) family delivers high-speed nonvolatile data logging, preventing data-loss even in harsh automotive and industrial operating environments over extreme temperatures.

The Excelon Auto series offers 2-Mb to 4-Mb automotive-grade densities, while the Excelon Ultra series offers 4-Mb to 8-Mb industrial-grade densities. Both families are available in low pin count small package options making them suited for a broad range of advanced automotive and industrial applications.

The Excelon Auto series is offered in AEC-Q100 extended temperature options with functional safety (ISO 26262) compliance. The Excelon Ultra series offers 108-MHz Quad Serial Peripheral Interface (SPI) performance, which outperforms legacy memories.

The Excelon family’s inherent NoDelay instant writes also eliminate power failure “data-at-risk” due to volatile data buffers in legacy technologies and is offered in reduced pin count QFN packages. The family features wide voltage operation from 1.71V to 3.6V and is available in RoHS-compliant industry-standard packages that are pin compatible with EEPROMs and other nonvolatile memories. All Cypress F-RAMs provide 100-trillion (1014) read/write cycle endurance with 10 years of data retention at 85° C or 151 years at 65° C.

Cypress’ Excelon F-RAM devices are currently sampling with production expected in the third quarter of 2018.

Cypress offers a broad portfolio of F-RAM products with densities from 4-Kb to 8-Mb and supply voltages from 1.8V to 5.5V. Cypress F-RAMs feature virtually unlimited endurance of one-hundred trillion (1014) read and write cycles, making them an ideal solution for write-intensive applications. F-RAM is the industry’s most energy efficient nonvolatile RAM solution; the F-RAM cell is inherently low power and operates without a charge pump.

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