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Cree’s Wolfspeed introduces new 1200V SiC MOSFET for power conversion for EVs

Wolfspeed, a Cree Company, has introduced its new third generation 1200V SiC MOSFET family for EV drivetrains. This switching device, which enables high-voltage power conversion, brings increased efficiency to the drivetrain while lowering system costs, paving the way for longer driving range and better overall EV performance for consumers.

In 2015 Wolfspeed introduced the industry’s first 900V SiC MOSFET family, which broke the cost barrier to SiC adoption in off-board and on-board chargers by delivering smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions. The new 1200V MOSFET extends the company’s technology into the drivetrain and will enable what Wolfspeed says is the world’s most efficient EV power converter systems.

Wolfspeed’s new C3M 1200V SiC MOSFET technology is capable of handling high current with the industry’s lowest drain-source on resistance (RDS(on)) performance at 1200V and the lowest switching losses, giving it the highest figure of merit on the market today, which increases the distance that consumers can drive on a single charge.

Engineering samples of Wolfspeed’s newest generation 1200V SiC MOSFETs are available to select customers and will be in full distribution later this year.

In addition to the 1200V SiC MOSFET, Wolfspeed continues to deliver better charging efficiency for EVs with enhanced SiC products for on-board and off-board chargers, including:

  • E-Series Diodes: The industry’s first 1200V SiC diodes to be both automotive qualified and high-humidity/high voltage/high-temperature qualified.

  • 20 kW Two-Level AFE and 20kW DC/DC Converters: Demonstrate how Wolfspeed C3M SiC MOSFETs can cut power losses and simplify system designs.

  • 6.6 kW Bi-Directional On-Board Charger: Delivers optimal efficiency for high-power-density, on-board charger applications.

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