Toshiba Electronic Devices & Storage Corporation launched two new 100V N-channel power MOSFETs for automotive 48V electrical system applications.
The line-up includes the low On-resistance “XPH4R10ANB,” which has a drain current of 70A, and the “XPH6R30ANB,” with a 45A drain current.
The new products are Toshiba’s first 100V N-channel power MOSFETs in the compact SOP Advance (WF) package for automotive applications. The wettable flank terminal structure of the package allows its automatic visual inspection when mounted on a circuit board, which helps increase reliability. The low On-resistance of the new MOSFETS helps reduce equipment power consumption; and the XPH4R10ANB delivers industry-leading low On-resistance.