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ROHM and LEADRIVE establish laboratory to develop SiC-based power devices

ROHM and China-based Leadrive Technology have opened a joint laboratory on SiC technology in the China (Shanghai) Pilot Free Trade Zone (Lingang New Area).

SiC power devices have been adopted increasingly in onboard vehicle chargers and DC/DC converters. These devices provide several advantages compared to silicon-based power devices such as IGBTs. One key benefit: significantly lower losses during both switching and conduction along with being able to operate at higher temperature.

Since 2017, ROHM and LEADRIVE have been collaborating and carrying out detailed technical exchanges on automotive applications utilizing SiC power devices. Establishing a joint research lab centered on vehicle power modules and inverters utilizing ROHM’s SiC MOSFET bare chips and isolated gate drivers will give both companies the opportunity to further accelerate the development of innovative power solutions.

LEADRIVE was established in 2017 as a high-tech company that supplies power modules utilizing advanced semiconductors and power solutions utilizing motor and inverters for new energy vehicles.

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