DENSO Corporation has adopted silicon carbide epitaxial wafers (SiC epi-wafers) manufactured by Showa Denko K.K. (SDK), for their latest booster power modules for fuel cell electric vehicles (FCEVs).
SDK’s SiC epi-wafers, launched in 2009, have been adopted by electronic device manufacturers for various devices including power supply for servers of cloud computing systems, quick charging stands for EVs, and railcars.
DENSO adopted SDK’s SiC epi-wafers for its next-generation power modules recognizing the track record of adoption by device manufacturers, highest-grade epi specifications, low density surface defects, and low frequency of basal plane dislocation.
When compared with current mainstream silicon-based semiconductors, SiC-based power semiconductors can operate under high-temperature, high-voltage, and high-current conditions, while substantially reducing energy loss. These features enable device manufacturers to produce smaller, lighter, more energy-efficient power control modules.
SiC power semiconductors are already used in on-board battery chargers and quick charging stands for EVs, and railcars. Demand for SiC power semiconductors is expected to grow, with full scale use in power control units (PCUs) for EVs in and after 2025.