SiC MOSFETs have become pivotal in power electronics, transforming numerous applications with their exceptional performance traits. As one example, 1200V SiC MOSFETs are the enabler of the transition of battery-electric vehicles to 800V systems.

SiC MOSFETs offer impressive attributes, including high breakdown voltage, low on-state resistance, and excellent thermal conductivity, positioning them as ideal choices for power-switching devices in high-frequency and high-temperature settings. The Yole Group forecasts that the SiC device market will hit US$10 billion by 2029.

In this context, in addition to its annual market and technology reports, Power SiC and Power SiC – Manufacturing 2024, and its quarterly Monitor, Power SiC/GaN Compound Semiconductor Market Monitor, Yole Group—a market, technology, performance, reverse engineering and costing analysis company—teamed up with SERMA Technologies, which brings its expertise in electronic technology performance testing, to present the first volume of the new SiC MOSFET Discretes Performance Analysis report.

The two companies have combined their expertise to release this first volume, which evaluates and compares five 1200V-class discrete SiC MOSFETs (along with a reference Si IGBT device) from global manufacturers under identical test conditions. Key parameters and characteristics are assessed to offer insights for engineers, researchers, and industries aiming for optimized power solutions.

This new SiC MOSFET Discretes Performance Comparison Analysis 2024 Vol 1 report thoroughly examines the static performance of selected SiC MOSFETs to provide a comprehensive understanding of their advantages. The first volume provides a performance analysis and comparison of 5 discrete SiC MOSFETs of 1200V-class from worldwide players: Wolfspeed (C3M0075120D), ROHM (SCT3080KLHR), Infineon (AIMW120R080M1), STMicroelectronics (SCTW40N120G2VAG), Anbonsemi (AS1M080120P), and a reference Si IGBT device from Infineon (IKW15N120CS7).

The comparative analysis includes the evaluation of key metrics such as on-state resistance, drain-to-source voltage, threshold voltage, breakdown voltage, and leakage currents under various operating conditions. The report also presents data and graphs of important parameters of the devices tested, including RDS(on)(VGS), RDS(on)(IDS), VDS, VGS(th), VBR(DSS), IDSS, IGSS, QG, IDS(VDS), and ISD(VSD) tested at various temperatures (from -55 °C up to 175 °C).

For example, the temperature evolution of the Vgs(th) and the breakdown voltage Vbr were characterized to assess the temperature stability behavior of the compared devices all over the temperature range.

This third-party objective analysis, conducted under identical test conditions, offers a more reliable performance comparison than device datasheets typically provide.

Additionally, Yole Group has conducted a physical analysis of all devices, including optical and SEM images and detailed measurements for package opening and die cross-section. These parameters are compiled to facilitate a comprehensive analysis of their impact on device performance. The report also includes the final component cost for each device and compares them based on their “performance versus cost” tradeoff.